2N7002HR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
2N7002H/SOT23/TO-236AB
2N7002H/SOT23/TO-236AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 300mA (Tc) 830mW (Tc) ytmonterad TO-236AB
N-Kanal 60 V 300mA (Tc) 830mW (Tc) ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The 2N7002H is an N-channel enhancement mode MOSFET in a SOT23 package, featuring a maximum drain-source voltage of 60 V and a continuous drain current of 360 mA at VGS = 10 V. It offers low on-state resistance (RDS(on)) of 1.6 Ω and fast switching capabilities, making it suitable for various applications.
The 2N7002H is an N-channel enhancement mode MOSFET in a SOT23 package, featuring a maximum drain-source voltage of 60 V and a continuous drain current of 360 mA at VGS = 10 V. It offers low on-state resistance (RDS(on)) of 1.6 Ω and fast switching capabilities, making it suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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