2N7002ET1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 260MA SOT23-3
MOSFET N-CH 60V 260MA SOT23-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 260mA (Ta) 300mW (Tj) ytmonterad SOT-23-3 (TO-236)
N-Kanal 60 V 260mA (Ta) 300mW (Tj) ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The 2N7002ET1G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage of 60 V and a continuous Drain Current of 260 mA. It features low RDS(on) and is housed in a compact SOT-23-3 package. This device is suitable for low side load switching, level shifting, and DC-DC conversion applications, making it ideal for portable electronics.
The 2N7002ET1G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage of 60 V and a continuous Drain Current of 260 mA. It features low RDS(on) and is housed in a compact SOT-23-3 package. This device is suitable for low side load switching, level shifting, and DC-DC conversion applications, making it ideal for portable electronics.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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