2N7002E-T1-E3
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 240MA SOT23-3
MOSFET N-CH 60V 240MA SOT23-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 240mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
N-Kanal 60 V 240mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The 2N7002E-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 240 mA. It features a low on-resistance (RDS(on)) of 3 Ω, a low threshold voltage of 2 V (typ.), and fast switching speed of 7.5 ns. This device is housed in a SOT-23-3 package and is suitable for low-voltage applications.
The 2N7002E-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 240 mA. It features a low on-resistance (RDS(on)) of 3 Ω, a low threshold voltage of 2 V (typ.), and fast switching speed of 7.5 ns. This device is housed in a SOT-23-3 package and is suitable for low-voltage applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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