2N7002BKV,115
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET 2N-CH 60V 0.34A SOT666
MOSFET 2N-CH 60V 0.34A SOT666
Detaljerad specifikation
Detaljerad specifikation
Mosfet Array 60V 340mA 350mW ytmonterad SOT-666
Mosfet Array 60V 340mA 350mW ytmonterad SOT-666
Beskrivning (eng)
Beskrivning (eng)
The 2N7002BKV is a dual N-channel enhancement mode MOSFET featuring Trench technology, designed for applications requiring high-speed switching. It operates at a maximum drain-source voltage of 60V and a continuous drain current of 340mA. The device is housed in a compact SOT666 package, ensuring efficient space utilization in circuit designs.
The 2N7002BKV is a dual N-channel enhancement mode MOSFET featuring Trench technology, designed for applications requiring high-speed switching. It operates at a maximum drain-source voltage of 60V and a continuous drain current of 340mA. The device is housed in a compact SOT666 package, ensuring efficient space utilization in circuit designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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