2N7002,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 300MA TO236AB
MOSFET N-CH 60V 300MA TO236AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 300mA (Tc) 830mW (Ta) ytmonterad TO-236AB
N-Kanal 60 V 300mA (Tc) 830mW (Ta) ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The 2N7002 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching performance. The device is suitable for logic level gate drive applications.
The 2N7002 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching performance. The device is suitable for logic level gate drive applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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