2N7002
Tillverkare
DIOTEC
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 280MA SOT23-3
MOSFET N-CH 60V 280MA SOT23-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 280mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
N-Kanal 60 V 280mA (Ta) 350mW (Ta) ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The 2N7002 is an N-Channel Enhancement Mode MOSFET designed for applications requiring low on-state resistance and fast switching times. It features a maximum Drain-Source voltage (VDS) of 60 V, a continuous Drain current (ID) of 280 mA, and a power dissipation (Ptot) of 350 mW. The device is housed in a SOT-23-3 package and is suitable for signal processing, drivers, and logic level conversion.
The 2N7002 is an N-Channel Enhancement Mode MOSFET designed for applications requiring low on-state resistance and fast switching times. It features a maximum Drain-Source voltage (VDS) of 60 V, a continuous Drain current (ID) of 280 mA, and a power dissipation (Ptot) of 350 mW. The device is housed in a SOT-23-3 package and is suitable for signal processing, drivers, and logic level conversion.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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