2N7000TA
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 200MA TO92-3
MOSFET N-CH 60V 200MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V (2.36 in) 200mA (Tc) 400mW (Ta) Genomgående hål TO-92-3
N-Kanal 60 V (2.36 in) 200mA (Tc) 400mW (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N7000TA from onsemi is an N-Channel MOSFET designed for low voltage applications. It features a maximum drain-source voltage of 60V and can handle a continuous drain current of 200mA at a case temperature (Tc). The device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 400mW at ambient temperature (Ta), this MOSFET is ideal for switching and amplification applications in various electronic circuits, ensuring reliable performance in compact designs.
The 2N7000TA from onsemi is an N-Channel MOSFET designed for low voltage applications. It features a maximum drain-source voltage of 60V and can handle a continuous drain current of 200mA at a case temperature (Tc). The device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 400mW at ambient temperature (Ta), this MOSFET is ideal for switching and amplification applications in various electronic circuits, ensuring reliable performance in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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