2N7000-D26Z
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 200MA TO92-3
MOSFET N-CH 60V 200MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 200mA (Ta) 400mW (Ta) Genomgående hål TO-92-3
N-Kanal 60 V 200mA (Ta) 400mW (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N7000-D26Z is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 200mA at a maximum power dissipation of 400mW. This device is housed in a TO-92-3 package, suitable for through-hole mounting. It is ideal for switching and amplification applications in various electronic circuits, providing efficient performance in compact designs. The 2N7000-D26Z is widely used in consumer electronics, automotive, and industrial applications.
The 2N7000-D26Z is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 200mA at a maximum power dissipation of 400mW. This device is housed in a TO-92-3 package, suitable for through-hole mounting. It is ideal for switching and amplification applications in various electronic circuits, providing efficient performance in compact designs. The 2N7000-D26Z is widely used in consumer electronics, automotive, and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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