2N6517TA
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 350V 0.5A TO92-3
TRANS NPN 350V 0.5A TO92-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 350 V 500 mA 200 MHz 625 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor NPN 350 V 500 mA 200 MHz 625 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N6517TA is a high voltage NPN bipolar junction transistor (BJT) designed for applications requiring up to 350 V collector-emitter voltage and 500 mA collector current. It features a maximum power dissipation of 625 mW and a frequency response of 200 MHz, making it suitable for various electronic circuits.
The 2N6517TA is a high voltage NPN bipolar junction transistor (BJT) designed for applications requiring up to 350 V collector-emitter voltage and 500 mA collector current. It features a maximum power dissipation of 625 mW and a frequency response of 200 MHz, making it suitable for various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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