2N6059
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 100V 12A TO3
TRANS NPN DARL 100V 12A TO3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 100 V 12 A 4MHz 150 W Ytmonterad TO-3
Bipolär (BJT) Transistor NPN - Darlington 100 V 12 A 4MHz 150 W Ytmonterad TO-3
Beskrivning (eng)
Beskrivning (eng)
The 2N6059 is a silicon NPN Darlington transistor designed for high current and high dissipation applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 12 A, and a total dissipation of 150 W. This device is suitable for power linear and low-frequency switching applications, housed in a TO-3 metal case.
The 2N6059 is a silicon NPN Darlington transistor designed for high current and high dissipation applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 12 A, and a total dissipation of 150 W. This device is suitable for power linear and low-frequency switching applications, housed in a TO-3 metal case.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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