2N5551TA
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 160V 0.6A TO92-3
TRANS NPN 160V 0.6A TO92-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 160 V 600 mA 100 MHz 625 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor NPN 160 V 600 mA 100 MHz 625 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N5551TA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 160V and a continuous collector current rating of 600mA, making it suitable for high-voltage switching and amplification tasks. With a transition frequency of 100MHz and a power dissipation capability of 625mW, this TO-92-3 package transistor is ideal for use in audio, RF, and general-purpose applications where reliable performance is essential.
The 2N5551TA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 160V and a continuous collector current rating of 600mA, making it suitable for high-voltage switching and amplification tasks. With a transition frequency of 100MHz and a power dissipation capability of 625mW, this TO-92-3 package transistor is ideal for use in audio, RF, and general-purpose applications where reliable performance is essential.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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