2N5430
Tillverkare
MICROCHIP TECHNOLOGY
Specifikation
Specifikation
NPN TRANSISTOR
NPN TRANSISTOR
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor
Bipolar (BJT) Transistor
Beskrivning (eng)
Beskrivning (eng)
The 2N5430 is a high-performance NPN bipolar junction transistor (BJT) designed for various amplification and switching applications. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 60 V, making it suitable for medium power applications. The transistor is housed in a TO-220 package, ensuring efficient thermal management. With its low saturation voltage and fast switching capabilities, the 2N5430 is ideal for use in audio amplifiers, signal processing, and power management circuits, providing reliable performance in demanding environments.
The 2N5430 is a high-performance NPN bipolar junction transistor (BJT) designed for various amplification and switching applications. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 60 V, making it suitable for medium power applications. The transistor is housed in a TO-220 package, ensuring efficient thermal management. With its low saturation voltage and fast switching capabilities, the 2N5430 is ideal for use in audio amplifiers, signal processing, and power management circuits, providing reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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