2N5416
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
PNP TRANSISTORS
PNP TRANSISTORS
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 300 V 1 A 750 mW Genomgående hål TO-5AA
Bipolär (BJT) Transistor PNP 300 V 1 A 750 mW Genomgående hål TO-5AA
Beskrivning (eng)
Beskrivning (eng)
The 2N5416 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 300 V, a collector current rating of 1 A, and a power dissipation capability of 750 mW. Packaged in a TO-5AA through-hole configuration, this transistor is suitable for various amplification and switching applications. Its robust design ensures reliable performance in demanding environments, making it an ideal choice for engineers seeking dependable components for their electronic circuits.
The 2N5416 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 300 V, a collector current rating of 1 A, and a power dissipation capability of 750 mW. Packaged in a TO-5AA through-hole configuration, this transistor is suitable for various amplification and switching applications. Its robust design ensures reliable performance in demanding environments, making it an ideal choice for engineers seeking dependable components for their electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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