2N5322
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 75V 2A TO39
TRANS PNP 75V 2A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 75 V 2 A 10 W Genomgående hål TO-39
Bipolär (BJT) Transistor PNP 75 V 2 A 10 W Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N5322 is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 75 V and can handle a collector current of up to 2 A, making it suitable for various power amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 10 W, the 2N5322 is ideal for use in linear and switching applications, providing efficient signal amplification and control in electronic circuits.
The 2N5322 is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 75 V and can handle a collector current of up to 2 A, making it suitable for various power amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 10 W, the 2N5322 is ideal for use in linear and switching applications, providing efficient signal amplification and control in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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