2N5195G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 80V 4A TO126
TRANS PNP 80V 4A TO126
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Genomgående hål TO-126
Bipolär (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Genomgående hål TO-126
Beskrivning (eng)
Beskrivning (eng)
The 2N5195G is a PNP bipolar junction transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a maximum power dissipation of 40 W. The device operates at a frequency of up to 2 MHz and is housed in a TO-126 package.
The 2N5195G is a PNP bipolar junction transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a maximum power dissipation of 40 W. The device operates at a frequency of up to 2 MHz and is housed in a TO-126 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Patrick eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K