2N5191G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 4A TO126
TRANS NPN 60V 4A TO126
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 4 A 2MHz 40 W Genomgående hål TO-126
Bipolär (BJT) Transistor NPN 60 V 4 A 2MHz 40 W Genomgående hål TO-126
Beskrivning (eng)
Beskrivning (eng)
The 2N5191G is a silicon NPN power transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 4 A, and a total device dissipation of 40 W. The transistor operates at a frequency of up to 2 MHz and is housed in a TO-126 package, ensuring excellent thermal performance with a thermal resistance of 3.12 °C/W.
The 2N5191G is a silicon NPN power transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 4 A, and a total device dissipation of 40 W. The transistor operates at a frequency of up to 2 MHz and is housed in a TO-126 package, ensuring excellent thermal performance with a thermal resistance of 3.12 °C/W.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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