2N5114
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
JFET P-CH 30V TO18
JFET P-CH 30V TO18
Detaljerad specifikation
Detaljerad specifikation
JFET P-Kanal 30 V 500 mW Genomgående hål TO-18 (TO-206AA)
JFET P-Kanal 30 V 500 mW Genomgående hål TO-18 (TO-206AA)
Beskrivning (eng)
Beskrivning (eng)
The 2N5114 is a P-Channel JFET designed for low-noise applications, featuring a maximum drain-source voltage of 30V and a power dissipation capability of 500 mW. This device is housed in a TO-18 (TO-206AA) package, suitable for through-hole mounting. It offers excellent performance in analog signal processing and switching applications, making it ideal for use in amplifiers, oscillators, and other electronic circuits requiring high input impedance and low distortion. Its robust design ensures reliability in various operating conditions.
The 2N5114 is a P-Channel JFET designed for low-noise applications, featuring a maximum drain-source voltage of 30V and a power dissipation capability of 500 mW. This device is housed in a TO-18 (TO-206AA) package, suitable for through-hole mounting. It offers excellent performance in analog signal processing and switching applications, making it ideal for use in amplifiers, oscillators, and other electronic circuits requiring high input impedance and low distortion. Its robust design ensures reliability in various operating conditions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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