2N4922G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 1A TO126
TRANS NPN 60V 1A TO126
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 1 A 3 MHz 30 W Genomgående hål TO-126
Bipolär (BJT) Transistor NPN 60 V 1 A 3 MHz 30 W Genomgående hål TO-126
Beskrivning (eng)
Beskrivning (eng)
The 2N4922G is a medium-power NPN bipolar junction transistor designed for driver circuits, switching, and amplifier applications. It features a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a power dissipation capability of 30 W. The device operates at a frequency of up to 3 MHz and is housed in a TO-126 package.
The 2N4922G is a medium-power NPN bipolar junction transistor designed for driver circuits, switching, and amplifier applications. It features a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a power dissipation capability of 30 W. The device operates at a frequency of up to 3 MHz and is housed in a TO-126 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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