2N4401BU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
BJT TO92 40V NPN 0.25W 150C
BJT TO92 40V NPN 0.25W 150C
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Genomgående hål TO-92-3
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N4401BU from onsemi is a high-performance NPN bipolar junction transistor (BJT) housed in a TO-92 package. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a power dissipation capability of 625mW and a transition frequency of 250MHz, this transistor is suitable for a variety of switching and amplification applications. Its robust design allows for operation at temperatures up to 150°C, making it ideal for demanding environments.
The 2N4401BU from onsemi is a high-performance NPN bipolar junction transistor (BJT) housed in a TO-92 package. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a power dissipation capability of 625mW and a transition frequency of 250MHz, this transistor is suitable for a variety of switching and amplification applications. Its robust design allows for operation at temperatures up to 150°C, making it ideal for demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Jan-Erik eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K