2N3906BU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
BJT TO92 40V PNP 0.625W 150C
BJT TO92 40V PNP 0.625W 150C
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N3906BU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter voltage of -40V, a collector current of -200mA, and a power dissipation of 625mW. The device operates at a maximum junction temperature of 150°C and has a bandwidth of 250MHz, making it suitable for various electronic circuits.
The 2N3906BU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter voltage of -40V, a collector current of -200mA, and a power dissipation of 625mW. The device operates at a maximum junction temperature of 150°C and has a bandwidth of 250MHz, making it suitable for various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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