2N3440
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 250V 1A TO39
TRANS NPN 250V 1A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 250 V 1 A 800 mW Genomgående hål TO-39 (TO-205AD)
Bipolär (BJT) Transistor NPN 250 V 1 A 800 mW Genomgående hål TO-39 (TO-205AD)
Beskrivning (eng)
Beskrivning (eng)
The 2N3440 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 250V and a collector current rating of 1A, this transistor can handle significant power levels, making it suitable for use in power amplifiers and switching circuits. The device is housed in a TO-39 (TO-205AD) package, ensuring ease of mounting in through-hole applications. Its maximum power dissipation is 800 mW, providing robust performance in demanding environments.
The 2N3440 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 250V and a collector current rating of 1A, this transistor can handle significant power levels, making it suitable for use in power amplifiers and switching circuits. The device is housed in a TO-39 (TO-205AD) package, ensuring ease of mounting in through-hole applications. Its maximum power dissipation is 800 mW, providing robust performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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