2N2907AUB
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 0.6A UB
TRANS PNP 60V 0.6A UB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 600 mA 500 mW ytmonterad UB
Bipolär (BJT) Transistor PNP 60 V 600 mA 500 mW ytmonterad UB
Beskrivning (eng)
Beskrivning (eng)
The 2N2907AUB is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 60V and can handle a collector current of up to 600mA, making it suitable for various switching and amplification tasks. With a power dissipation capability of 500mW, this surface-mounted device is ideal for compact circuit designs. Its robust construction ensures reliability in demanding environments, making it a preferred choice for engineers in the electronics industry.
The 2N2907AUB is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 60V and can handle a collector current of up to 600mA, making it suitable for various switching and amplification tasks. With a power dissipation capability of 500mW, this surface-mounted device is ideal for compact circuit designs. Its robust construction ensures reliability in demanding environments, making it a preferred choice for engineers in the electronics industry.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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