2N2222AUA
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 50V 0.8A 4SMD
TRANS NPN 50V 0.8A 4SMD
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 50 V 800 mA 650 mW ytmonterad 4-SMD
Bipolär (BJT) Transistor NPN 50 V 800 mA 650 mW ytmonterad 4-SMD
Beskrivning (eng)
Beskrivning (eng)
The 2N2222AUA is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of switching and amplification applications. It features a maximum collector-emitter voltage of 50V and a collector current rating of 800mA, making it suitable for low to medium power applications. The device is housed in a compact 4-SMD package, allowing for efficient surface mount assembly. With a power dissipation capability of 650mW, this transistor is ideal for use in signal processing, driver circuits, and general-purpose amplification tasks.
The 2N2222AUA is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of switching and amplification applications. It features a maximum collector-emitter voltage of 50V and a collector current rating of 800mA, making it suitable for low to medium power applications. The device is housed in a compact 4-SMD package, allowing for efficient surface mount assembly. With a power dissipation capability of 650mW, this transistor is ideal for use in signal processing, driver circuits, and general-purpose amplification tasks.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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