2N2219A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 40V 0.8A TO39
TRANS NPN 40V 0.8A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 40 V 800 mA 800 mW Genomgående hål TO-39
Bipolär (BJT) Transistor NPN 40 V 800 mA 800 mW Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N2219A from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and can handle a collector current of up to 800mA, with a power dissipation rating of 800mW. Packaged in a TO-39 metal can, this transistor is suitable for through-hole mounting, providing robust thermal performance and reliability in various electronic circuits. Its versatility makes it ideal for use in audio amplifiers, signal processing, and power management applications.
The 2N2219A from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and can handle a collector current of up to 800mA, with a power dissipation rating of 800mW. Packaged in a TO-39 metal can, this transistor is suitable for through-hole mounting, providing robust thermal performance and reliability in various electronic circuits. Its versatility makes it ideal for use in audio amplifiers, signal processing, and power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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