2N1711
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 50V 0.5A TO39
TRANS NPN 50V 0.5A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 50 V 500 mA 100MHz 800 mW Genomgående hål TO-39
Bipolär (BJT) Transistor NPN 50 V 500 mA 100MHz 800 mW Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N1711 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 500mA. With a transition frequency of 100MHz and a power dissipation capability of 800mW, this transistor is suitable for high-frequency switching and amplification tasks. Packaged in a TO-39 metal can, it offers robust thermal performance and reliability in demanding environments, making it ideal for both consumer and industrial applications.
The 2N1711 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 500mA. With a transition frequency of 100MHz and a power dissipation capability of 800mW, this transistor is suitable for high-frequency switching and amplification tasks. Packaged in a TO-39 metal can, it offers robust thermal performance and reliability in demanding environments, making it ideal for both consumer and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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