1N4447
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 100V DO35
DIODE GEN PURP 100V DO35
Detaljerad specifikation
Detaljerad specifikation
Diode 100 V Genomgående hål DO-35
Diode 100 V Genomgående hål DO-35
Beskrivning (eng)
Beskrivning (eng)
The 1N4447 is a general-purpose diode with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 200 mA. It features a DO-35 axial lead package and is suitable for various applications requiring reliable rectification and signal processing. Its thermal resistance is 300 °C/W, and it can handle a power dissipation of 500 mW.
The 1N4447 is a general-purpose diode with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 200 mA. It features a DO-35 axial lead package and is suitable for various applications requiring reliable rectification and signal processing. Its thermal resistance is 300 °C/W, and it can handle a power dissipation of 500 mW.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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