1N4150TR
Tillverkare
VISHAY
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 50V 300MA DO35
DIODE GEN PURP 50V 300MA DO35
Detaljerad specifikation
Detaljerad specifikation
Diode 50 V 300mA Genomgående hål DO-204AH (DO-35)
Diode 50 V 300mA Genomgående hål DO-204AH (DO-35)
Beskrivning (eng)
Beskrivning (eng)
The 1N4150TR is a general-purpose silicon epitaxial planar diode with a maximum repetitive peak reverse voltage of 50 V and a forward current rating of 300 mA. It features low forward voltage drop and high forward current capability, making it suitable for high-speed switching applications. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in various electronic circuits.
The 1N4150TR is a general-purpose silicon epitaxial planar diode with a maximum repetitive peak reverse voltage of 50 V and a forward current rating of 300 mA. It features low forward voltage drop and high forward current capability, making it suitable for high-speed switching applications. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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