1N3768R
Tillverkare
GENESIC SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP REV 1KV 35A DO5
DIODE GEN PURP REV 1KV 35A DO5
Detaljerad specifikation
Detaljerad specifikation
Diode 1000 V 35A Chassi, Stud Montering DO-5
Diode 1000 V 35A Chassi, Stud Montering DO-5
Beskrivning (eng)
Beskrivning (eng)
The 1N3768R is a high-performance silicon standard recovery diode designed for general-purpose applications. It features a repetitive peak reverse voltage (VRRM) of 1000 V and a continuous forward current (IF) of 35 A. The diode is housed in a DO-5 package, offering high surge capability and a wide operating temperature range of -55 to 150 °C.
The 1N3768R is a high-performance silicon standard recovery diode designed for general-purpose applications. It features a repetitive peak reverse voltage (VRRM) of 1000 V and a continuous forward current (IF) of 35 A. The diode is housed in a DO-5 package, offering high surge capability and a wide operating temperature range of -55 to 150 °C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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