1N1183A
Tillverkare
GENESIC SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 50V 40A DO203AB
DIODE GEN PURP 50V 40A DO203AB
Detaljerad specifikation
Detaljerad specifikation
Diode 50 V 40A Chassi, Stud Montering DO-203AB
Diode 50 V 40A Chassi, Stud Montering DO-203AB
Beskrivning (eng)
Beskrivning (eng)
The 1N1183A is a general-purpose silicon recovery diode with a repetitive peak reverse voltage (VRRM) of 50 V and a continuous forward current (IF) of 40 A. It features a high surge capability in a DO-203AB chassis, making it suitable for various applications. The diode operates within a temperature range of -55 to 150 °C and is not ESD sensitive.
The 1N1183A is a general-purpose silicon recovery diode with a repetitive peak reverse voltage (VRRM) of 50 V and a continuous forward current (IF) of 40 A. It features a high surge capability in a DO-203AB chassis, making it suitable for various applications. The diode operates within a temperature range of -55 to 150 °C and is not ESD sensitive.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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