ZXMC3A16DN8TA
Manufacturer
DIODES INC
Data sheet
Data sheet
Specification
Specification
MOSFET N/P-CH 30V 4.9A/4.1A 8SO
MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Detailed specification
Detailed specification
Mosfet Array 30V 4.9A, 4.1A 1.25W surface-mounted 8-SO
Mosfet Array 30V 4.9A, 4.1A 1.25W surface-mounted 8-SO
Description
Description
The ZXMC3A16DN8TA is a complementary MOSFET array featuring N-Channel and P-Channel devices with a maximum Drain-Source Voltage (V(BR)DSS) of 30V and -30V, respectively. The N-Channel has a continuous Drain Current (ID) of 6.4A and an on-state resistance (RDS(on)) of 0.035Ω, while the P-Channel supports -5.4A with an RDS(on) of 0.048Ω. This device is optimized for low voltage, high efficiency power management applications, housed in an 8-SO surface mount package.
The ZXMC3A16DN8TA is a complementary MOSFET array featuring N-Channel and P-Channel devices with a maximum Drain-Source Voltage (V(BR)DSS) of 30V and -30V, respectively. The N-Channel has a continuous Drain Current (ID) of 6.4A and an on-state resistance (RDS(on)) of 0.035Ω, while the P-Channel supports -5.4A with an RDS(on) of 0.048Ω. This device is optimized for low voltage, high efficiency power management applications, housed in an 8-SO surface mount package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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