XPH2R106NC,L1Q(O
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
TOSHIBA - XPH2R106NC,L1Q(O - Power MOSFET, N Channel, 60 V, 110 A, 0.0017 ohm, SOP Advance, surface-mounted
TOSHIBA - XPH2R106NC,L1Q(O - Power MOSFET, N Channel, 60 V, 110 A, 0.0017 ohm, SOP Advance, surface-mounted
Description
Description
The TOSHIBA XPH2R106NC,L1Q(O) is a Power MOSFET featuring an N-channel configuration with a maximum drain-source voltage of 60 V and a continuous drain current rating of 110 A. It has a low on-state resistance of RDS(ON) = 1.7 mΩ (typ.) at VGS = 10 V, making it suitable for high-efficiency applications.
The TOSHIBA XPH2R106NC,L1Q(O) is a Power MOSFET featuring an N-channel configuration with a maximum drain-source voltage of 60 V and a continuous drain current rating of 110 A. It has a low on-state resistance of RDS(ON) = 1.7 mΩ (typ.) at VGS = 10 V, making it suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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