VP3203N8-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 1.1A TO243AA
MOSFET P-CH 30V 1.1A TO243AA
Detailed specification
Detailed specification
P-Channel 30 V 1.1A (Tj) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
P-Channel 30 V 1.1A (Tj) 1.6W (Ta) surface-mounted TO-243AA (SOT-89)
Description
Description
The VP3203N8-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -1.1A. It features a low on-state resistance (RDS(ON)) of 0.6Ω at VGS = -10V and is housed in a TO-243AA (SOT-89) package. This device is designed for efficient switching and amplification applications, providing excellent thermal stability and low power drive requirements.
The VP3203N8-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -1.1A. It features a low on-state resistance (RDS(ON)) of 0.6Ω at VGS = -10V and is housed in a TO-243AA (SOT-89) package. This device is designed for efficient switching and amplification applications, providing excellent thermal stability and low power drive requirements.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.C