VP3203N3-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 650MA TO92-3
MOSFET P-CH 30V 650MA TO92-3
Detailed specification
Detailed specification
P-Channel 30 V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
P-Channel 30 V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
Description
Description
The VP3203N3-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -650mA. It features a low on-state resistance (RDS(on)) of 0.6Ω at VGS = -10V and ID = -3.0A. This device is designed for efficient switching and amplification in various applications, ensuring excellent thermal stability and low power drive requirements.
The VP3203N3-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -650mA. It features a low on-state resistance (RDS(on)) of 0.6Ω at VGS = -10V and ID = -3.0A. This device is designed for efficient switching and amplification in various applications, ensuring excellent thermal stability and low power drive requirements.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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