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VP3203N3-G

Manufacturer

MICROCHIP TECHNOLOGY

data-sheet
Data sheet
Data sheet
VP3203N3-G is suitable for industrial applications including motor controls, converters, amplifiers, and power supply circuits. Its low threshold voltage and high input impedance make it ideal for driving relays, solenoids, and other electronic components requiring efficient switching.
Specification
Specification
MOSFET P-CH 30V 650MA TO92-3
MOSFET P-CH 30V 650MA TO92-3
Detailed specification
Detailed specification
P-Channel 30 V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
P-Channel 30 V 650mA (Tj) 740mW (Ta) Through Hole TO-92-3
Description
Description
The VP3203N3-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -650mA. It features a low on-state resistance (RDS(on)) of 0.6Ω at VGS = -10V and ID = -3.0A. This device is designed for efficient switching and amplification in various applications, ensuring excellent thermal stability and low power drive requirements.
The VP3203N3-G is a P-Channel MOSFET with a maximum drain-to-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -650mA. It features a low on-state resistance (RDS(on)) of 0.6Ω at VGS = -10V and ID = -3.0A. This device is designed for efficient switching and amplification in various applications, ensuring excellent thermal stability and low power drive requirements.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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