VP2110K1-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 100V 120MA TO236AB
MOSFET P-CH 100V 120MA TO236AB
Detailed specification
Detailed specification
P-Channel 100 V 120mA (Tj) 360mW (Ta) surface-mounted TO-236AB (SOT23)
P-Channel 100 V 120mA (Tj) 360mW (Ta) surface-mounted TO-236AB (SOT23)
Description
Description
The Microchip Technology VP2110K1-G is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source voltage (BVDSS) of -100V and an on-state resistance (RDS(ON)) of 12Ω at -5.0V, with a continuous Drain current (ID) of -120mA. This surface-mounted TO-236AB (SOT-23) device is optimized for low power drive requirements and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
The Microchip Technology VP2110K1-G is a P-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source voltage (BVDSS) of -100V and an on-state resistance (RDS(ON)) of 12Ω at -5.0V, with a continuous Drain current (ID) of -120mA. This surface-mounted TO-236AB (SOT-23) device is optimized for low power drive requirements and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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