VP0808L-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 80V 280MA TO92-3
MOSFET P-CH 80V 280MA TO92-3
Detailed specification
Detailed specification
P-Channel 80 V 280mA (Tj) 1W (Tc) Through Hole TO-92-3
P-Channel 80 V 280mA (Tj) 1W (Tc) Through Hole TO-92-3
Description
Description
The VP0808L-G is a P-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -80V and an On-State Drain Current (ID(ON)) of -1.1A. It features low RDS(ON) of 5Ω, fast switching speeds, and excellent thermal stability, making it suitable for various applications. The device is housed in a 3-lead TO-92 package and is ideal for motor controls, amplifiers, and power supply circuits.
The VP0808L-G is a P-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -80V and an On-State Drain Current (ID(ON)) of -1.1A. It features low RDS(ON) of 5Ω, fast switching speeds, and excellent thermal stability, making it suitable for various applications. The device is housed in a 3-lead TO-92 package and is ideal for motor controls, amplifiers, and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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