VP0109N3-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 90V 250MA TO92-3
MOSFET P-CH 90V 250MA TO92-3
Detailed specification
Detailed specification
P-Channel 90 V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
P-Channel 90 V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
Description
Description
The VP0109N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -90V and an On-State Drain Current (ID(ON)) of -250mA. It features low RDS(ON) values of 6-15Ω, excellent thermal stability, and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
The VP0109N3-G is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -90V and an On-State Drain Current (ID(ON)) of -250mA. It features low RDS(ON) values of 6-15Ω, excellent thermal stability, and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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