VP0104N3-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 40V 250MA TO92-3
MOSFET P-CH 40V 250MA TO92-3
Detailed specification
Detailed specification
P-Channel 40 V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
P-Channel 40 V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
Description
Description
The VP0104N3-G is a P-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -40V and an On-State Drain Current (ID(ON)) of -250mA. It features low RDS(ON) values of 6-15Ω, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
The VP0104N3-G is a P-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of -40V and an On-State Drain Current (ID(ON)) of -250mA. It features low RDS(ON) values of 6-15Ω, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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