VN2210N3-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 1.2A TO92-3
MOSFET N-CH 100V 1.2A TO92-3
Detailed specification
Detailed specification
N-Channel 100 V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3
N-Channel 100 V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3
Description
Description
The VN2210N3-G is an N-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 1.2A. It features low on-state resistance (RDS(on)) of 0.35Ω at VGS = 10V, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
The VN2210N3-G is an N-Channel Enhancement-mode Vertical DMOS FET with a maximum Drain-to-Source Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 1.2A. It features low on-state resistance (RDS(on)) of 0.35Ω at VGS = 10V, fast switching speeds, and excellent thermal stability, making it suitable for various applications including motor controls and power supply circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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