VN2110K1-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 200MA SOT23-3
MOSFET N-CH 100V 200MA SOT23-3
Detailed specification
Detailed specification
N-Channel 100 V 200mA (Tj) 360mW (Tc) surface-mounted SOT-23-3
N-Channel 100 V 200mA (Tj) 360mW (Tc) surface-mounted SOT-23-3
Description
Description
The VN2110K1-G is an N-Channel MOSFET with a breakdown voltage of 100V and a maximum continuous drain current of 200mA. It features low on-state resistance (RDS(on)) of 4.5Ω at VGS = 5V and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits. The device is housed in a compact SOT-23-3 package.
The VN2110K1-G is an N-Channel MOSFET with a breakdown voltage of 100V and a maximum continuous drain current of 200mA. It features low on-state resistance (RDS(on)) of 4.5Ω at VGS = 5V and fast switching speeds, making it suitable for various applications including motor controls and power supply circuits. The device is housed in a compact SOT-23-3 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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