VN0104N3-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 40V 350MA TO92-3
MOSFET N-CH 40V 350MA TO92-3
Detailed specification
Detailed specification
N-Channel 40 V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
N-Channel 40 V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
Description
Description
The VN0104N3-G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 40V and a continuous Drain current (ID) of 350mA. It features low on-state resistance (RDS(on)) of 3Ω at VGS = 5V and fast switching speeds, making it suitable for various applications. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-92-3 package.
The VN0104N3-G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 40V and a continuous Drain current (ID) of 350mA. It features low on-state resistance (RDS(on)) of 3Ω at VGS = 5V and fast switching speeds, making it suitable for various applications. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-92-3 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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