UPD166031AT1U-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
POWER TRS MP-3ZK HIGHT SIDE IPD(
POWER TRS MP-3ZK HIGHT SIDE IPD(
Detailed specification
Detailed specification
General Purpose PMIC TO-252-7
General Purpose PMIC TO-252-7
Description
Description
The UPD166031AT1U-E1-AY from Renesas Electronics is a 2nd Generation Intelligent Power Device (IPD) designed for high-side switching applications. It features an N-channel MOSFET with built-in charge pump, low on-state resistance of 10 mΩ, and comprehensive protection mechanisms including short circuit and thermal shutdown. The device operates within a voltage range of 4.5V to 28V and is suitable for various loads, including 14V DC grounded systems.
The UPD166031AT1U-E1-AY from Renesas Electronics is a 2nd Generation Intelligent Power Device (IPD) designed for high-side switching applications. It features an N-channel MOSFET with built-in charge pump, low on-state resistance of 10 mΩ, and comprehensive protection mechanisms including short circuit and thermal shutdown. The device operates within a voltage range of 4.5V to 28V and is suitable for various loads, including 14V DC grounded systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.C