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UMC3NT1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
UMC3NT1G is designed for use in low-power electronic applications, including consumer electronics and telecommunications. Its pre-biased configuration simplifies circuit design, making it suitable for compact and efficient designs in various electronic devices.
Specification
Specification
TRANS PREBIAS NPN/PNP 50V SC88A
TRANS PREBIAS NPN/PNP 50V SC88A
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)
Description
Description
The UMC3NT1G is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 150mW. This surface-mounted device is housed in the SC-88A package, ideal for low-power applications, simplifying circuit design and reducing component count.
The UMC3NT1G is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V, with a collector current of 100mA and power dissipation of 150mW. This surface-mounted device is housed in the SC-88A package, ideal for low-power applications, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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