ULN2067B
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS 4NPN DARL 80V 1.75A 16DIP
TRANS 4NPN DARL 80V 1.75A 16DIP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10 mm) (0.79x0.28 in)
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10 mm) (0.79x0.28 in)
Description
Description
The ULN2067B is a quad NPN Darlington transistor array designed for high current and high voltage applications. It features a maximum output current of 1.75 A, a breakdown voltage of 80 V, and integrated suppression diodes for inductive loads. This device is suitable for interfacing with 6-15 V CMOS and PMOS logic families.
The ULN2067B is a quad NPN Darlington transistor array designed for high current and high voltage applications. It features a maximum output current of 1.75 A, a breakdown voltage of 80 V, and integrated suppression diodes for inductive loads. This device is suitable for interfacing with 6-15 V CMOS and PMOS logic families.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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