ULN2065B
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS 4NPN DARL 80V 1.75A 16DIP
TRANS 4NPN DARL 80V 1.75A 16DIP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10 mm (0.79x0.28 in))
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10 mm (0.79x0.28 in))
Description
Description
The ULN2065B is a quad NPN Darlington transistor array designed for high current and high voltage applications. It features a maximum output current of 1.75 A, a breakdown voltage of 80 V, and integrated suppression diodes for inductive loads. This device is suitable for interfacing logic to various loads, making it ideal for industrial and automotive applications.
The ULN2065B is a quad NPN Darlington transistor array designed for high current and high voltage applications. It features a maximum output current of 1.75 A, a breakdown voltage of 80 V, and integrated suppression diodes for inductive loads. This device is suitable for interfacing logic to various loads, making it ideal for industrial and automotive applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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