TP0610K-T1-E3
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 60V 185MA SOT23-3
MOSFET P-CH 60V 185MA SOT23-3
Detailed specification
Detailed specification
P-Channel 60 V 185mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
P-Channel 60 V 185mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The TP0610K-T1-E3 is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 185mA. It features a low on-state resistance (RDS(on)) of 6Ω, a low threshold voltage of -2V (typ.), and fast switching speed of 20ns (typ.). This device is housed in a SOT-23-3 package and is suitable for high-side switching applications.
The TP0610K-T1-E3 is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 185mA. It features a low on-state resistance (RDS(on)) of 6Ω, a low threshold voltage of -2V (typ.), and fast switching speed of 20ns (typ.). This device is housed in a SOT-23-3 package and is suitable for high-side switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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