TN2404K-T1-GE3
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 240V 200MA SOT23-3
MOSFET N-CH 240V 200MA SOT23-3
Detailed specification
Detailed specification
N-Channel 240 V 200mA (Ta) 360mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 240 V 200mA (Ta) 360mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The TN2404K-T1-GE3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 240V and a continuous Drain Current (ID) of 200mA. It features a low on-state resistance (RDS(on)) of 4Ω, making it suitable for high-voltage applications. The device is housed in a SOT-23-3 package, providing excellent thermal stability and low input/output leakage.
The TN2404K-T1-GE3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 240V and a continuous Drain Current (ID) of 200mA. It features a low on-state resistance (RDS(on)) of 4Ω, making it suitable for high-voltage applications. The device is housed in a SOT-23-3 package, providing excellent thermal stability and low input/output leakage.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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