TIP147TU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP DARL 100V 10A TO3PN
TRANS PNP DARL 100V 10A TO3PN
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 80 W Through Hole TO-3PN
Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 80 W Through Hole TO-3PN
Description
Description
The TIP147TU is a PNP Darlington bipolar junction transistor (BJT) designed for high-power applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 80 W. This transistor is housed in a TO-3PN package, suitable for through-hole mounting, making it ideal for applications requiring high current gain and efficiency. Its Darlington configuration provides high input impedance and significant current amplification, making it suitable for various amplification and switching applications.
The TIP147TU is a PNP Darlington bipolar junction transistor (BJT) designed for high-power applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 80 W. This transistor is housed in a TO-3PN package, suitable for through-hole mounting, making it ideal for applications requiring high current gain and efficiency. Its Darlington configuration provides high input impedance and significant current amplification, making it suitable for various amplification and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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