TIP142
Manufacturer
CENTRAL SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 10A TO218
TRANS NPN 100V 10A TO218
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 10 A 125 W Through Hole TO-218
Bipolar (BJT) Transistor NPN 100 V 10 A 125 W Through Hole TO-218
Description
Description
The TIP142 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a collector current (IC) rating of 10 A, and a power dissipation (PD) capability of 125 W. This device is housed in a TO-218 through-hole package, making it suitable for various applications requiring robust performance.
The TIP142 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification. It features a maximum collector-emitter voltage (BVCBO) of 100 V, a collector current (IC) rating of 10 A, and a power dissipation (PD) capability of 125 W. This device is housed in a TO-218 through-hole package, making it suitable for various applications requiring robust performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
TIP142 is also available from the following manufacturersContact sales
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