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TIP112

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
TIP112 is suitable for use in industrial applications, particularly in linear and switching equipment. Its robust specifications make it ideal for medium power circuits requiring high voltage and current handling capabilities, ensuring reliable operation in demanding environments.
Specification
Specification
TRANS NPN DARL 100V 2A TO220
TRANS NPN DARL 100V 2A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Through Hole TO-220
Description
Description
The TIP112 is a silicon NPN Darlington transistor designed for medium power applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 2 A, and a total power dissipation of 50 W. Packaged in a TO-220 case, it integrates an antiparallel collector-emitter diode for enhanced performance in linear and switching applications.
The TIP112 is a silicon NPN Darlington transistor designed for medium power applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 2 A, and a total power dissipation of 50 W. Packaged in a TO-220 case, it integrates an antiparallel collector-emitter diode for enhanced performance in linear and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
TIP112 is also available from the following manufacturers
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