TIP112
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 2A TO220
TRANS NPN DARL 100V 2A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 2 W Through Hole TO-220
Description
Description
The TIP112 is a silicon NPN Darlington transistor designed for medium power applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 2 A, and a total power dissipation of 50 W. Packaged in a TO-220 case, it integrates an antiparallel collector-emitter diode for enhanced performance in linear and switching applications.
The TIP112 is a silicon NPN Darlington transistor designed for medium power applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 2 A, and a total power dissipation of 50 W. Packaged in a TO-220 case, it integrates an antiparallel collector-emitter diode for enhanced performance in linear and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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