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TF412ST5G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
TF412ST5G is suitable for applications in low-frequency general-purpose amplification, impedance conversion, and infrared sensor applications. Its compact design and low power consumption make it ideal for use in consumer electronics and telecommunications.
Specification
Specification
JFET N-CH 30V 10MA SOT883
JFET N-CH 30V 10MA SOT883
Detailed specification
Detailed specification
JFET N-Channel 30 V 10 mA 100 mW Surface Mount SOT-883 (XDFN3) (1x0.6 in)
JFET N-Channel 30 V 10 mA 100 mW Surface Mount SOT-883 (XDFN3) (1x0.6 in)
Description
Description
The TF412ST5G is an N-Channel JFET designed for low-frequency general-purpose amplification and impedance conversion. It operates at a maximum drain-to-source voltage of 30 V and a drain current of 10 mA, with a power dissipation of 100 mW. The device features a small input capacitance of 4 pF and a forward transfer admittance of 5.0 mS, packaged in an ultra-small SOT-883 (XDFN3) form factor.
The TF412ST5G is an N-Channel JFET designed for low-frequency general-purpose amplification and impedance conversion. It operates at a maximum drain-to-source voltage of 30 V and a drain current of 10 mA, with a power dissipation of 100 mW. The device features a small input capacitance of 4 pF and a forward transfer admittance of 5.0 mS, packaged in an ultra-small SOT-883 (XDFN3) form factor.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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